VISHAY SI6562CDQ-T1-GE3 Dual MOSFET, N and P Channel, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV StarTech MUYHSFMM 5" Type: 120� (horizontal)

5" Type: 120� (horizontal)

Shelved Frequency Response

0" (229 x 292 x 381 mm) Weight 4

4% by diameter / 11% by area

Brand IDEC Part Number HW9Z-KG2 Quantity Each Technical Data Sheet EN

VISHAY SI6562CDQ-T1-GE3 Dual MOSFET, N and P Channel, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV StarTech MUYHSFMM 5" Type: 120� (horizontal)This is a Dual MOSFET, N and P Channel, 6. 7 A, 20 V, 0. 18 ohm, 4. 5 V, 600 mV product from VISHAY with the model number SI6562CDQ T1 GE3Product details Transistor Polarity N and P Channel Continuous Drain Current Id 6. 7A Drain Source Voltage Vds 20V On Resistance Rds(on) 0. 18ohm Rds(on) Test Voltage Vgs 4. 5V Threshold Voltage Vgs 600mV Power Dissipation Pd 1. 6W Transistor Case Style TSSOP No. of Pins 8Pins Operating Temperature Max 150C Product