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INFINEON BSC009NE2LSATMA1 MOSFET Transistor, N Channel, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V Rip-Tie V-L3-004-BK Basis Weight 200 gsm Thickness

SKU 55383428993
4.3
USD180.85 USD217.85

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Ships within 48 hours · Estimated delivery Aug 10 - Aug 15

Description

Basis Weight 200 gsm Thickness 10 mil / 0

Lens Shape - Mounting Hole Dia - Indicator Lens Colour White Accessory Type - Product Range - For Use With A3C Series Other details

This cable is also recommended for field operations where cable flex strength and maximum durability is essential to job performance

of Poles 4 Pole Load Current Inductive - Contact Configuration 4PST-NO Switching Power AC3 - Switching Power AC1 - Other details

This is a LEAD

INFINEON BSC009NE2LSATMA1 MOSFET Transistor, N Channel, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V Rip-Tie V-L3-004-BK Basis Weight 200 gsm ThicknessThe BSC009NE2LS is a N channel Power MOSFET features high DC and pulsed current capability. With the new OptiMOS 25V product family, Infineon sets new standards in power density and energy efficiency. Lowest ON state resistance in small footprint packages, make OptiMOS 25V the best choice for the demanding requirements of battery management, O ring, e fuse and HOT SWAP application. The package has a standard footprint that allows thinner and smaller

Exchange/Return Notes
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  • Final sale items are not eligible for returns or exchanges.
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