STMICROELECTRONICS BDW94C Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 80 W, 12 A, 1000 hFE CyberPower CP850AVRLCD Operating Temperature Min -40°C Capacitor

Operating Temperature Min -40°C Capacitor Terminals Radial Leaded Operating Temperature Max 105°C Lifetime @ Temperature 10000 hours @ 105°C Voltage Rating 63V Product Range EB Series Diameter 10mm Automotive Qualification Standard - ESR - Capacitance 220µF Lead Spacing 5mm Capacitance Tolerance ± 20% Packaging Each Height 20mm Other details

This lens is compatible with Sony E mirrorless cameras and supports all camera functions

91 kg) Packaging Info Package Weight 8

Rod Compatibility 3/8" (10 mm) Weight 1

The slip-on design of the WS6 features dimensions that accommodate the Rode NTG4

STMICROELECTRONICS BDW94C Bipolar (BJT) Single Transistor, Darlington, PNP, 100 V, 80 W, 12 A, 1000 hFE CyberPower CP850AVRLCD Operating Temperature Min -40°C CapacitorThe BDW94C is a 100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. Complementary to the BDW93C Integrated anti parallel collector emitter diode Well controlled hFE parameter for increased reliability Applications Industrial Product details