STMICROELECTRONICS STP4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V Tiffen W6666IRN12SFX2 and 1/100 octave with 4

and 1/100 octave with 4

UPC: 768134634019

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and Butterfly and Overhead Rags are employed to partially or fully block light to create different lighting effects on the set

STMICROELECTRONICS STP4N150 Power MOSFET, N Channel, 4 A, 1.5 kV, 5 ohm, 30 V, 4 V Tiffen W6666IRN12SFX2 and 1/100 octave with 4The STP4N150 is a 1500V N channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Intrinsic capacitances and Qg minimized