ON SEMICONDUCTOR BD139G Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1.25 W, 1.5 A, 40 hFE Sensei LCR-PU Minimum working distance of 13"

Minimum working distance of 13" allows shooters to get close to their subjects

Ease of Assembly This rail rack is so easy to put together

This is a Battery Charger for 1 Cell of Li-Ion battery

Make the most of your display experience by installing it flat against the wall with Peerless-AV IM746P In-Wall Articulating Arm

and Speakon and binding post outputs

ON SEMICONDUCTOR BD139G Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1.25 W, 1.5 A, 40 hFE Sensei LCR-PU Minimum working distance of 13"The BD139G is an NPN Plastic Medium Power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. High DC current gain Halogen free Applications Industrial Product details Power Dissipation Pd 1. 25W DC Collector Current 1. 5A Collector Emitter Voltage V(br)ceo 80V Transition Frequency ft Operating Temperature Max 150C Transistor Polarity NPN DC Current Gain hFE 40hFE No. of Pins