VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV Middle Atlantic UTR1 increasing the apparent volume while

increasing the apparent volume while keeping tight control over peak levels

while the other side can be used for holding various types of gear or accessories

Includes PSD 2 U Power Supply

The push pull latching mechanism provides a secure connection whilst the density of the contacts provides for considerable panel space savings

This is a AXIAL INDUCTOR

VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV Middle Atlantic UTR1 increasing the apparent volume whileThe SI2329DS T1 GE3 is a 8V P channel TrenchFET Power MOSFET. The surface mounted LITTLE FOOT power MOSFET uses integrated circuit and small signal packages which have been modified to provide the heat transfer capabilities required by power devices. Halogen free according to IEC 61249 2 21 definition 100% Rg Tested Applications Power Management Product details Power Dissipation Pd 2. 5W Operating Temperature Max 150C Continuous Drain Current Id 6A